5 f o 1 e g a p 0 0 . 1 . v e r 0 0 1 0 j e 7 8 0 0 s d 8 0 r f eb 25, 2 0 1 3 preliminary data sheet nx6351gp series laser diode 1 270/1 290/1 310/1 330/1 350 nm alga i nas m qw-dfb laser d iode for 9.8 gb/s cp ri and 10g e-pon onu applica tion des cript ion t h e nx635 1gp series is a 1 2 7 0 / 1 290 / 1 310 / 1 3 30/ 1 3 5 0 n m m u ltip le q u a n t u m w ell (mqw) stru c t ure d distribu ted feed-back (dfb) laser d i o d e with ingaas m onito r pin-pd. applications ? 9 . 8 g b p s c pr i ? 1 0 g e-p o n o nu fea t ure s ? o p tical o u tpu t p o wer p o = 8.5 m w ? l o w t h res hol d cur r ent i th = 7 m a ? diffe re ntial efficiency d = 0.35 w /a ? w i de operating tem p erature range t c = ? 4 0 t o + 8 5 c ? i n g a as m onitor p in- p d ? c a n p ac k a g e 5.6 mm ? focal poi n t 1 0 . 2 mm r08 d s0 087e j01 00 rev.1.00 feb 25, 20 13 a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
nx6351gp series chapter title r08ds0087ej0100 rev.1.00 page 2 of 5 feb 25, 2013 package dimensions (unit: mm) pin connections bottom view 1.00.1 15.01.0 1.20.1 3.970.15 7.50.5 110 2 (0.3) *2 (0.3) *2 x = 200 m max. y = 200 m max. ? ? 2.0 p. c . d 4? 0.45 ( 4.3) *2 ( 3.75) *2 *1 focal point: a point to get maximum optical output power from fiber. *2 ( ) indicates nominal dimension . ( 5.6) *2 focal point *1 reference plane 1 2 3 4 1 2 3 4 ld pd 10.2+/-0.5 a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
nx6351gp series chapter title r08ds0087ej0100 rev.1.00 page 3 of 5 feb 25, 2013 ordering information part number package pin connections nx6351gpxx ? 1 $ = s l q & $ 1 z l w k d v s k h u l f d o o h q v f d s 1 2 3 4 ld pd note: 1. the last two digits (?xx?) of part number indicates wavelength code. the relationships between the code and wavelength are as follows. wavelength code wavelength (nm) 27 1 270 29 1 290 31 1 310 33 1 330 35 1 350 remarks 1. the color of lens cap might be observed differently. 2. the hermetic test will be performed as aql 1.0% . a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
nx6351gp series chapter title r08ds0087ej0100 rev.1.00 page 4 of 5 feb 25, 2013 absolute maximum ratings (t a = 25 c, unless otherwise specified) parameter symbol ratings unit optical output power p o 15 mw forward current of ld i f 120 ma reverse voltage of ld v r 2.0 v forward current of pd i f 10.0 ma reverse voltage of pd v r 15 v operating case temperature t c ? 40 to +85 c storage temperature t stg ? 40 to +95 c lead soldering temperature t sld 350 (3 sec.) c relative humidity (noncondensing) rh 85 % recommended ld drive current at module level parameter symbol conditions min. typ. max. unit t c = 25 c ? 30 ? bias current i bias t c = 85 c ? ? 70 ma electro-optical characteristics (t c = ? 40 to +85 c, cw, bol, unless otherwise specified) parameter symbol conditions min. typ. max. unit signaling rate ? 9.8304 ? gb/s optical output power p o ? 8.5 ? mw operating voltage v op p o = 8.5 mw ? ? 2.0 v threshold current i th t c = 25 c ? 7 15 ma ? ? 30 differential efficiency d p o = 8.5 mw, t c = 25 c 0.23 ? ? w/a p o = 8.5 mw 0.13 ? ? nx6351gp27 1 260 ? 1 280 nx6351gp29 1 280 ? 1 300 nx6351gp31 1 300 ? 1 320 nx6351gp33 1 320 ? 1 340 peak emission wavelength p p o = 8.5 mw nx6351gp35 1 340 1 360 nm side mode suppression ratio smsr p o = 8.5 mw 35 ? ? db rise time t r 20-80% ? 1 ? ? 50 ps fall time t f 80-20% ? 1 ? ? 50 ps monitor current i m v r = 1.5 v, p o = 8.5 mw 100 ? 1 000 a monitor dark current i d v r = 3.3 v, t c = 25 c ? ? 10 na v r = 3.3 v ? ? 100 monitor pd terminal capacitance c t v r = 3.3 v, f = 1 mhz ? ? 20 pf note: 1. 9.8304 gb/s, prbs 2 31 ? 1, nrz, duty cycle = 50% a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
nx6351gp series chapter title r08ds0087ej0100 rev.1.00 page 5 of 5 feb 25, 2013 safety information on this product danger invisible laser radiation avoid direct exposure to beam output power mw max wavelength nm class lllb laser product avoid exposure-invisible laser radiation is emitted from this aperture semiconductor lase r warning laser beam a laser beam is emitted from this diode during operation. the laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of eyesight. ? do not look directly into the laser beam. ? avoid exposure to the laser beam, any reflected or collimated beam. caution gaas products this product uses gallium arsenide (gaas). gaas vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. ? follow related laws and ordinances when disposi ng of the product. if there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subjec t to special control) up until final disposal. ? do not burn, destroy, cut, crush, or chemically dissolve the product. ? do not lick the product or in any way allow it to enter the mouth. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history nx6351gp series data sheet description rev. date page summary 1.00 feb 25, 2013 ? first edition issued
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